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| QIR0620001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT transistor and one super fast recovery diode in a chopper configuration. All components are encapsulated in a plastic package are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (70ns) Diodes High Frequency Operation (2025kHz) Isolated Base plate for Easy Heat sinking Schematic: D1 D2 Applications: AC Motor Control Motion/Servo Control Ordering Information: Contact Powerex Custom Modules Page 1 PRELIMINARY 06/07/97 QIR0620001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Maximum Ratings, Tj=25C unless otherwise specified Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current (D1) Diode Forward Surge Current (D1) Power Dissipation V Isolation Symbol VCES VGES IC ICM IFM IFM Pd VRMS 600 20 200 400* 300 600* 1100 2500 Units Volts Volts Amperes Amperes Amperes Amperes Watts Volts Static Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) VCE(sat) Test Conditions VCE=VCES VCE=0V IC=20mA, VCE=10V IC=200A, VGE=15V IC=200A, VGE=15V, Tj=150C VCC=300V, IC=200A, VGS=15V IE=300A, VGS=0V Min Typ Max 1.0 0.5 7.5 2.8 Units mA A Volts Volts Volts 4.5 6.0 2.1 2.15 Total Gate Charge QG 600 nC Diode Forward Voltage (D1) VFM 2.8 Volts Dynamic Electrical Characteristics, Tj=25C unless otherwise specified Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn off delay time Fall Time Diode Reverse Recovery Time Diode reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE1=VGE2=15 V RG=3.1 IE=200A diE/dt=400A/S Min Typ Max 20 7 4 200 550 300 300 110 0.54 Units nF nF nF nS nS nS nS nS C Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified Characteristic Thermal Resistance, Junction to Symbol RJC Test Conditions Per IGBT Min Typ Max 0.16 Units C/W Page 2 PRELIMINARY 06/07/97 QIR0620001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Case Page 3 PRELIMINARY 06/07/97 |
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